| Fine-Grain Isotropic Graphite | High-temperature furnace fixtures, electrical-discharge machining electrodes, analytical crucibles, continuous-casting components and precision tooling. | Typically 100–500 ppm ash | 1.75–1.90 g/cm³ | 8–16% | 35–80 MPa | 80–140 W/m·K | 4.0–5.5 × 10⁻⁶/K | 2,500–3,000°C in inert gas or vacuum | Specify grain size, isotropy, dimensional tolerances, surface finish, machining allowance and resistance to thermal shock. |
| Ultra-Fine-Grain Isotropic Graphite | Semiconductor hot-zone parts, high-temperature susceptors, ion-implantation components, laboratory furnace parts and complex machined assemblies. | Typically 20–100 ppm ash | 1.80–1.92 g/cm³ | 6–12% | 45–90 MPa | 90–150 W/m·K | 3.8–5.2 × 10⁻⁶/K | 2,500–3,000°C in controlled atmosphere | Prioritize low particle generation, homogeneous microstructure, low permeability, tight machining tolerances and lot-to-lot consistency. |
| Nuclear-Grade Graphite | Reactor-core moderator or reflector components, high-temperature nuclear test assemblies and irradiation research components. | Typically 100–1,000 ppm ash; nuclear impurity limits are material-specific | 1.70–1.85 g/cm³ | 15–25% | 20–45 MPa | 70–120 W/m·K | 3.5–5.0 × 10⁻⁶/K | Up to approximately 2,500–3,000°C in inert conditions; reactor limits depend on design | Require traceability, isotopic and elemental impurity analysis, irradiation data, dimensional stability, porosity control and qualification documentation. |
| Semiconductor-Grade Graphite | Silicon and compound-semiconductor crystal growth, wafer-processing susceptors, epitaxy parts, heater supports and high-temperature furnace hardware. | Typically 5–50 ppm ash before coating | 1.75–1.90 g/cm³ | 8–15% | 35–75 MPa | 80–140 W/m·K | 4.0–5.5 × 10⁻⁶/K | 2,500–3,000°C in vacuum or inert gas | Confirm metal contamination limits, particle performance, outgassing, gas permeability, coating compatibility and cleanroom packaging requirements. |
| Pyrolytic Graphite | Thermal-management shields, specialized furnace insulation, X-ray and optical components, and applications requiring directional thermal properties. | Typically below 100 ppm ash | 2.10–2.25 g/cm³ | Usually below 2% | 20–60 MPa, orientation-dependent | In-plane: 1,000–2,000 W/m·K; through-plane: 5–20 W/m·K | Near 0 to 1.0 × 10⁻⁶/K in-plane; strongly anisotropic | 2,500–3,000°C in inert gas or vacuum | Evaluate orientation, layer structure, thickness uniformity, anisotropic expansion, brittleness and handling damage. |
| Vibration-Molded Graphite | Large furnace components, heating elements, crucibles, thermal-treatment tooling and applications requiring large cross-sections. | Typically 200–1,000 ppm ash | 1.65–1.85 g/cm³ | 12–22% | 20–50 MPa | 60–110 W/m·K | 4.0–6.0 × 10⁻⁶/K | 2,500–3,000°C in inert gas or vacuum | Compare large-size availability, machining yield, permeability, dimensional stability, thermal shock performance and total cost per finished part. |
| Isostatically Pressed Graphite | Precision semiconductor tooling, high-temperature crucibles, photovoltaic processing equipment, EDM electrodes and demanding furnace assemblies. | Typically 50–500 ppm ash; ultra-pure variants can be lower | 1.75–1.90 g/cm³ | 8–18% | 30–80 MPa | 70–130 W/m·K | 4.0–5.5 × 10⁻⁶/K | 2,500–3,000°C in inert gas or vacuum | Check uniformity in all directions, grain size, mechanical-property variation, impurity profile, machinability and supply of large near-net shapes. |
| *Temperature values are typical material capability ranges for vacuum or oxygen-free inert atmospheres. Graphite oxidizes in air at substantially lower temperatures, and actual limits depend on geometry, atmosphere, pressure, heating rate, load, purity and coating. Property ranges are representative industry values and should be confirmed against the supplier’s current technical datasheet and qualification records. |
